Invention Grant
US08653578B2 Semiconductor device comprising string structures formed on active region
有权
半导体器件包括形成在有源区上的串结构
- Patent Title: Semiconductor device comprising string structures formed on active region
- Patent Title (中): 半导体器件包括形成在有源区上的串结构
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Application No.: US12555830Application Date: 2009-09-09
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Publication No.: US08653578B2Publication Date: 2014-02-18
- Inventor: Changhyun Lee , Jungal Choi
- Applicant: Changhyun Lee , Jungal Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0093774 20080924
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate. The channel region of the selection gate has a higher impurity concentration than that of the memory gate. Impurities may be implanted at different angles to form the channel regions having different impurity concentrations.
Public/Granted literature
- US20100072559A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-03-25
Information query
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