Invention Grant
- Patent Title: Semiconductor apparatus and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13405665Application Date: 2012-02-27
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Publication No.: US08653651B2Publication Date: 2014-02-18
- Inventor: Masayuki Uchida , Takashi Togasaki , Satoru Hara , Kentaro Suga
- Applicant: Masayuki Uchida , Takashi Togasaki , Satoru Hara , Kentaro Suga
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-059355 20110317
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
According to one embodiment, a semiconductor apparatus includes a semiconductor device, a heat spreader, a regulating unit, a containing unit, and a holding unit. The heat spreader is bonded to the semiconductor device with an interposed solder layer. The regulating unit is configured to regulate a dimension between the semiconductor device and the heat spreader. The containing unit is configured to contain melted solder in an interior of the containing unit. The holding unit is configured to allow melted solder held in an interior of the holding unit. The holding unit is configured to replenish the melted solder in the case where an amount of the melted solder contained in the containing unit is insufficient. The holding unit is configured to recover the melted solder in the case where the amount of the melted solder contained in the containing unit is excessive.
Public/Granted literature
- US20120235291A1 SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-09-20
Information query
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