Invention Grant
- Patent Title: Barrier layers for copper interconnect
- Patent Title (中): 铜互连屏障层
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Application No.: US12832790Application Date: 2010-07-08
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Publication No.: US08653664B2Publication Date: 2014-02-18
- Inventor: Nai-Wei Liu , Zhen-Cheng Wu , Cheng-Lin Huang , Po-Hsiang Huang , Yung-Chih Wang , Shu-Hui Su , Dian-Hau Chen , Yuh-Jier Mii
- Applicant: Nai-Wei Liu , Zhen-Cheng Wu , Cheng-Lin Huang , Po-Hsiang Huang , Yung-Chih Wang , Shu-Hui Su , Dian-Hau Chen , Yuh-Jier Mii
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/44
Abstract:
A copper interconnect includes a copper layer formed in a dielectric layer, having a first portion and a second portion. A first barrier layer is formed between the first portion of the copper layer and the dielectric layer. A second barrier layer is formed at the boundary between the second portion of the copper layer and the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer.
Public/Granted literature
- US20110006429A1 BARRIER LAYERS FOR COPPER INTERCONNECT Public/Granted day:2011-01-13
Information query
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