Invention Grant
- Patent Title: Copper bonding wire for semiconductor device and bonding structure thereof
- Patent Title (中): 半导体器件用铜接合线及其接合结构
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Application No.: US13577199Application Date: 2011-02-03
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Publication No.: US08653668B2Publication Date: 2014-02-18
- Inventor: Tomohiro Uno , Takashi Yamada , Atsuo Ikeda
- Applicant: Tomohiro Uno , Takashi Yamada , Atsuo Ikeda
- Applicant Address: JP Tokyo JP Saitama
- Assignee: Nippon Steel & Sumikin Materials Co., Ltd.,Nippon Micrometal Corporation
- Current Assignee: Nippon Steel & Sumikin Materials Co., Ltd.,Nippon Micrometal Corporation
- Current Assignee Address: JP Tokyo JP Saitama
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-021971 20100203
- International Application: PCT/JP2011/052270 WO 20110203
- International Announcement: WO2011/096487 WO 20110811
- Main IPC: H01L23/49
- IPC: H01L23/49
Abstract:
A bonding structure and a copper bonding wire for semiconductor device include a ball-bonded portion formed by bonding to the aluminum electrode a ball formed on a front end of the copper bonding wire. After being heated at any temperature between 130° C. and 200° C., the ball-bonded portion exhibits a relative compound ratio R1 of 40-100%, the relative compound ratio R1 being a ratio of a thickness of a Cu—Al intermetallic compound to thicknesses of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of the ball-bonded portion.
Public/Granted literature
- US20120299182A1 COPPER BONDING WIRE FOR SEMICONDUCTOR AND BONDING STRUCTURE THEREOF Public/Granted day:2012-11-29
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