The present disclosure provides a manufacturing method of a quartz-crystal device, in which its lid and base is manufactured with smaller thermal expansion coefficient between AT-cut quartz-crystal wafer. The method for manufacturing a quartz-crystal device comprises the steps of: preparing an AT-cut quartz-crystal wafer (70) having a plurality of frames, the frame includes an AT-cut vibrating piece having a first principal surface and an second principal surface, and an outer frame which surrounds the AT-cut vibrating piece for supporting the AT-cut frame; preparing a lid wafer (60) having a plurality of a lids; preparing a quartz-crystal base wafer (80) including a plurality of a base; and bonding the AT-cut quartz-crystal wafer, the quartz-crystal base wafer and the quartz-crystal lid wafer; wherein size of the AT-cut quartz-crystal wafer, the quartz-crystal base wafer and the quartz-crystal lid wafer are between three to four inches; and the quartz-crystal base wafer and the quartz-crystal lid wafer are cut at an angle between 24°00′ or more and 32°28′ or less from crystallographic Z-axis.