Invention Grant
US08653879B2 Level shifter and semiconductor integrated circuit including the shifter
有权
电平移位器和包括移位器的半导体集成电路
- Patent Title: Level shifter and semiconductor integrated circuit including the shifter
- Patent Title (中): 电平移位器和包括移位器的半导体集成电路
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Application No.: US13685052Application Date: 2012-11-26
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Publication No.: US08653879B2Publication Date: 2014-02-18
- Inventor: Tsuyoshi Matsushita
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-118579 20100524
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A level shifter for converting an input pulse signal of low-voltage amplitude to high-voltage amplitude includes a low voltage circuit configured to generate complementary-pulse signals of low-voltage amplitude from the input pulse signal, and a high voltage circuit configured to generate a pulse signal of high-voltage amplitude based on the complementary-pulse signals. The low voltage circuit, including high-threshold voltage transistors, includes a plurality of inverter circuits connected in cascade and at least one resistive-switch circuit connected between an input and an output of at least one of the plurality of inverter circuits configured to operate as a resistor when in a conductive state.
Public/Granted literature
- US20130082759A1 LEVEL SHIFTER AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SHIFTER Public/Granted day:2013-04-04
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