Invention Grant
- Patent Title: Variable resistance memory with a select device
- Patent Title (中): 具有选择装置的可变电阻存储器
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Application No.: US13252827Application Date: 2011-10-04
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Publication No.: US08654560B2Publication Date: 2014-02-18
- Inventor: Wim Deweerd , Yun Wang , Prashant Phatak , Tony Chiang
- Applicant: Wim Deweerd , Yun Wang , Prashant Phatak , Tony Chiang
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
According to various embodiments, a variable resistance memory element and memory element array that uses variable resistance changes includes a select device, such as an ovonic threshold switch. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element.
Public/Granted literature
- US20120025164A1 VARIABLE RESISTANCE MEMORY WITH A SELECT DEVICE Public/Granted day:2012-02-02
Information query
