A solid-state memory in which each memory cell includes a cross-point addressable write element. Each memory cell includes a storage element, such as a pair of cross-coupled inverters, and a read buffer for coupling one of the storage nodes to a read bit line for the column containing the cell. The write element of each memory cell includes one or a pair of write select transistors controlled by a write word line for the row containing the cell, and write pass transistors connected to corresponding storage nodes and connected in series with a write select transistor. The write pass transistors are gated by a write bit line for the column containing the cell. In operation, a write reference is coupled to one of the storage nodes of a memory cell in the selected column and the selected row, depending on the data state carried by the complementary write bit lines for that column.