Invention Grant
- Patent Title: Flash memory device and method for programming flash memory device
- Patent Title (中): 闪存设备和闪存设备编程方法
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Application No.: US12728359Application Date: 2010-03-22
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Publication No.: US08656085B2Publication Date: 2014-02-18
- Inventor: Jae-gyu Jung
- Applicant: Jae-gyu Jung
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2009-0058583 20090629
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28
Abstract:
A flash memory device resilient to bit errors and a programming method suitable for the flash memory are provided. The flash memory device stores data in a parallel manner in a superpage which is generated by grouping a plurality of physical pages into a logical page. The flash memory device spreads input data using a predetermined spreading code to generate spread data. The spread data is stored on a superpage-by-superpage basis.
Public/Granted literature
- US20100332735A1 FLASH MEMORY DEVICE AND METHOD FOR PROGRAMMING FLASH MEMORY DEVICE Public/Granted day:2010-12-30
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