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US08656263B2 Trellis-coded modulation in a multi-level cell flash memory device 有权
网格编码调制在多级单元闪存设备中

Trellis-coded modulation in a multi-level cell flash memory device
Abstract:
A method and system for storing data in a multi-level cell (MLC) flash memory device are described. The method includes receiving data for storage in the flash memory device, the flash memory device comprising an array of MLC flash memory cells, and encoding the received data into non-binary symbols according to a trellis-coded modulation scheme. The method further includes writing each of the non-binary symbols to a respective flash memory cell set, wherein each flash memory cell set comprises a plurality of MLC flash memory cells.
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