Invention Grant
- Patent Title: Wiring substrate, semiconductor device and manufacturing method thereof
- Patent Title (中): 配线基板,半导体装置及其制造方法
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Application No.: US13473089Application Date: 2012-05-16
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Publication No.: US08659127B2Publication Date: 2014-02-25
- Inventor: Naoyuki Koizumi , Akihiko Tateiwa
- Applicant: Naoyuki Koizumi , Akihiko Tateiwa
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: IPUSA, PLLC
- Priority: JP2011-128215 20110608
- Main IPC: H01L23/552
- IPC: H01L23/552

Abstract:
A semiconductor device includes a wiring substrate, and a semiconductor chip, wherein the wiring substrate includes a glass plate having an opening portion penetrating through a first surface of the glass plate to a second surface of the glass plate, a resin portion penetrating through the first surface to the second surface, and a through wiring penetrating through the resin portion from the first surface to the second surface to electrically connect a first wiring layer formed on a side of the first surface with a third wiring layer formed on a side of the second surface, wherein the semiconductor chip is accommodated inside the opening portion.
Public/Granted literature
- US20120313226A1 WIRING SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-12-13
Information query
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