Invention Grant
- Patent Title: RF power transistor circuit
- Patent Title (中): RF功率晶体管电路
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Application No.: US12746793Application Date: 2010-04-22
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Publication No.: US08659359B2Publication Date: 2014-02-25
- Inventor: Hussain H. Ladhani , Gerard J. Bouisse , Jeffrey K. Jones
- Applicant: Hussain H. Ladhani , Gerard J. Bouisse , Jeffrey K. Jones
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Daniel D. Hill
- International Application: PCT/IB2010/001283 WO 20100422
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
Public/Granted literature
- US20130033325A1 RF POWER TRANSISTOR CIRCUIT Public/Granted day:2013-02-07
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