Invention Grant
- Patent Title: CBRAM/ReRAM with improved program and erase algorithms
- Patent Title (中): CBRAM / ReRAM具有改进的编程和擦除算法
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Application No.: US13548470Application Date: 2012-07-13
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Publication No.: US08659954B1Publication Date: 2014-02-25
- Inventor: Derric Lewis , Shane Hollmer , Vasudevan Gopalakrishnan , John Dinh , Foroozan Sarah Koushan , Juan Pablo Saenz Echeverry
- Applicant: Derric Lewis , Shane Hollmer , Vasudevan Gopalakrishnan , John Dinh , Foroozan Sarah Koushan , Juan Pablo Saenz Echeverry
- Applicant Address: US CA Sunnyvale
- Assignee: Adesto Technologies Corporation
- Current Assignee: Adesto Technologies Corporation
- Current Assignee Address: US CA Sunnyvale
- Agent Michael C. Stephens, Jr.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Structures and methods for controlling operation of a programmable impedance element are disclosed herein. In one embodiment, a method of controlling a programmable impedance element can include: (i) receiving a program or erase command to be executed on the programmable impedance element; (ii) selecting an operation algorithm for executing the command, where the operation algorithm is selected from among a plurality of operation algorithms by decoding at least two bits stored in a register; (iii) determining, using the register, a plurality of option variables for the selected operation algorithm, where the option variables are used to set conditions for one or more of a plurality of program and erase operations of the selected operation algorithm; and (iv) executing the command on the programmable impedance element by performing the one or more of the plurality of program and erase operations of the selected operation algorithm.
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