Invention Grant
US08659954B1 CBRAM/ReRAM with improved program and erase algorithms 有权
CBRAM / ReRAM具有改进的编程和擦除算法

CBRAM/ReRAM with improved program and erase algorithms
Abstract:
Structures and methods for controlling operation of a programmable impedance element are disclosed herein. In one embodiment, a method of controlling a programmable impedance element can include: (i) receiving a program or erase command to be executed on the programmable impedance element; (ii) selecting an operation algorithm for executing the command, where the operation algorithm is selected from among a plurality of operation algorithms by decoding at least two bits stored in a register; (iii) determining, using the register, a plurality of option variables for the selected operation algorithm, where the option variables are used to set conditions for one or more of a plurality of program and erase operations of the selected operation algorithm; and (iv) executing the command on the programmable impedance element by performing the one or more of the plurality of program and erase operations of the selected operation algorithm.
Information query
Patent Agency Ranking
0/0