Invention Grant
- Patent Title: Word-line voltage regulating circuit and single power supply memory
- Patent Title (中): 字线调压电路和单电源存储器
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Application No.: US13541600Application Date: 2012-07-03
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Publication No.: US08659971B2Publication Date: 2014-02-25
- Inventor: Lei Wang , Yi Xu , Xiaojin Guan
- Applicant: Lei Wang , Yi Xu , Xiaojin Guan
- Applicant Address: CN Shanghai
- Assignee: Grace Semiconductor Manufacturing Corporation
- Current Assignee: Grace Semiconductor Manufacturing Corporation
- Current Assignee Address: CN Shanghai
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN201110187079 20110705
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A word-line voltage regulating circuit and a single power supply memory are disclosed. The word-line voltage regulating circuit includes: a charge pump for raising an input voltage to a desired value and outputting the raised input voltage as an output voltage; a controller for inputting a refresh signal to the charge pump according to the output voltage of the charge pump; and a comparator for inputting a feedback signal to the charge pump according to a comparison result between the output voltage of the charge pump and a reference voltage. The charge pump works under control of the refresh signal when the memory is in an active mode, and works under control of the feedback signal when the memory is in a standby mode. The word-line voltage regulating circuit can effectively reduce the power consumption and can meet the requirement for proportional scale-down of integrated circuits.
Public/Granted literature
- US20130010536A1 WORD-LINE VOLTAGE REGULATING CIRCUIT AND SINGLE POWER SUPPLY MEMORY Public/Granted day:2013-01-10
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