Invention Grant
- Patent Title: Sequential-write, random-read memory
- Patent Title (中): 顺序写入,随机读取存储器
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Application No.: US12819082Application Date: 2010-06-18
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Publication No.: US08659973B2Publication Date: 2014-02-25
- Inventor: Scott McLeod , William W. Walker
- Applicant: Scott McLeod , William W. Walker
- Applicant Address: JP Kawasaki-shi
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki-shi
- Agency: Baker Botts L.L.P.
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C8/04 ; G11C7/22

Abstract:
In one embodiment, a method includes, in response to assertion of a write-enable signal at a memory array that comprises a plurality of words, sequentially and at a first clock frequency writing data to the memory array starting at a beginning of the memory array until the memory array is full. The method includes, independent of the writing of data to the memory array, asynchronously and at a second clock frequency that is slower than the first clock frequency reading data from the memory array based on read addresses received at the memory array.
Public/Granted literature
- US20110310692A1 SEQUENTIAL-WRITE, RANDOM-READ MEMORY Public/Granted day:2011-12-22
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