Invention Grant
US08659973B2 Sequential-write, random-read memory 有权
顺序写入,随机读取存储器

Sequential-write, random-read memory
Abstract:
In one embodiment, a method includes, in response to assertion of a write-enable signal at a memory array that comprises a plurality of words, sequentially and at a first clock frequency writing data to the memory array starting at a beginning of the memory array until the memory array is full. The method includes, independent of the writing of data to the memory array, asynchronously and at a second clock frequency that is slower than the first clock frequency reading data from the memory array based on read addresses received at the memory array.
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