Invention Grant
- Patent Title: Integrated transmitter with on-chip power distribution
- Patent Title (中): 具有片上功率分配的集成发射器
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Application No.: US13646297Application Date: 2012-10-05
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Publication No.: US08660505B2Publication Date: 2014-02-25
- Inventor: Ahmadreza Rofougaran , Maryam Rofougaran
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Farjami & Farjami LLP
- Main IPC: H04B1/04
- IPC: H04B1/04

Abstract:
Methods and systems for an integrated leaky wave antenna-based transmitter and on-chip power distribution are disclosed, and may include supplying one or more bias voltages and ground for a chip including a plurality of power amplifiers (PAs) utilizing bias voltage and ground lines. One or more leaky wave antennas (LWAs) may be communicatively coupled to the power amplifiers. Wireless signals may be transmitted utilizing the LWAs integrated in the lines in the chip. Radio frequency (RF) signals may be transmitted via the plurality of LWAs. The RF signals may include 60 GHz signals and the LWAs may include microstrip and/or coplanar waveguides. A cavity length of the LWAs may be configured by a spacing between conductive lines in the microstrip and/or coplanar waveguides. The LWAs may be configured to transmit the wireless signals at a desired angle from a surface of the chip.
Public/Granted literature
- US20130072141A1 Integrated Transmitter with On-Chip Power Distribution Public/Granted day:2013-03-21
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