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US08661312B2 Error detection and correction scheme for a memory device 有权
存储器件的错误检测和校正方案

Error detection and correction scheme for a memory device
Abstract:
Data is read from a memory array. Before being stored in a data buffer, a Hamming code detection operation and a Reed-Solomon code detection operation are operated in parallel to determine if the data word has any errors. The results of the parallel detection operations are communicated to a controller circuit. If an error is present that can be corrected by the Hamming code correction operation, this is performed and the Reed-Solomon code detection operation is performed on the corrected word. If the error is uncorrectable by the Hamming code, the Reed-Solomon code correction operation is performed on the word.
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