A computer-implemented method of managing a memory of a non-volatile solid state memory device by balancing write/erase cycles among blocks to level block usage. The method includes monitoring an occurrence of an error during a read operation in a memory unit of the device, where the error is correctable by error-correcting code, and programming the memory unit according to the monitored occurrence of the error, where the step of monitoring the occurrence of an error is carried out for at least one block, and wherein said step of programming includes wear-leveling the monitored block according the error monitored for the monitored block.