Invention Grant
US08662010B2 Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method
失效
等离子体处理装置，等离子体处理方法，等离子体成膜装置和等离子体膜沉积方法
- Patent Title: Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method
- Patent Title (中): 等离子体处理装置，等离子体处理方法，等离子体成膜装置和等离子体膜沉积方法
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Application No.: US11797601Application Date: 2007-05-04
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Publication No.: US08662010B2Publication Date: 2014-03-04
- Inventor: Ryuichi Matsuda , Tadashi Shimazu , Masahiko Inoue
- Applicant: Ryuichi Matsuda , Tadashi Shimazu , Masahiko Inoue
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Heavy Industries, Ltd.
- Current Assignee: Mitsubishi Heavy Industries, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2002-178129 20020619; JP2002-351250 20021203
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306
Abstract:
A plasma film deposition apparatus (plasma processing apparatus) includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface. The second antenna 11b is supplied with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by a power supply. Lines of magnetic force F2, heading in a direction opposite to the direction of lines of magnetic force F1 appearing at the site of the antenna 11a, are thereby generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated over a wide range within a tubular container 2.
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