Invention Grant
US08662886B2 System for improved pressure control in horizontal diffusion furnace scavenger system for controlling oxide growth
有权
用于改善水平扩散炉清除系统中控制氧化物生长的压力控制系统
- Patent Title: System for improved pressure control in horizontal diffusion furnace scavenger system for controlling oxide growth
- Patent Title (中): 用于改善水平扩散炉清除系统中控制氧化物生长的压力控制系统
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Application No.: US11938438Application Date: 2007-11-12
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Publication No.: US08662886B2Publication Date: 2014-03-04
- Inventor: Miles Dudman
- Applicant: Miles Dudman
- Applicant Address: US CA San Jose
- Assignee: Micrel, Inc.
- Current Assignee: Micrel, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Sawyer Law Group, P.C.
- Main IPC: A01H5/02
- IPC: A01H5/02
Abstract:
The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using pressure. The present invention, in one or more implementations, includes a pressure stabilization system to dynamically adjust scavenger pressure in a furnace during wafer fabrication in relation to a pressure formation range, value, or one or more pressure indicators in a wafer fabrication process.
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