Invention Grant
US08663390B2 Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
有权
独立辐射气体预热用于前体分解控制和低温CVD系统中的气体反应动力学
- Patent Title: Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
- Patent Title (中): 独立辐射气体预热用于前体分解控制和低温CVD系统中的气体反应动力学
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Application No.: US13175499Application Date: 2011-07-01
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Publication No.: US08663390B2Publication Date: 2014-03-04
- Inventor: David Keith Carlson , Satheesh Kuppurao , Howard Beckford , Herman Diniz , Kailash Kiran Patalay , Brian Hayes Burrows , Jeffrey Ronald Campbell , Zouming Zhu , Xiaowei Li , Errol Antonio Sanchez
- Applicant: David Keith Carlson , Satheesh Kuppurao , Howard Beckford , Herman Diniz , Kailash Kiran Patalay , Brian Hayes Burrows , Jeffrey Ronald Campbell , Zouming Zhu , Xiaowei Li , Errol Antonio Sanchez
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/452
- IPC: C23C16/452 ; C23C16/46 ; C23F1/00 ; H01L21/306 ; C23C16/02 ; C23C16/06
Abstract:
A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.
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