Invention Grant
US08663402B2 Sputtering target with few surface defects, and surface processing method thereof 有权
表面缺陷少的溅射靶及其表面处理方法

Sputtering target with few surface defects, and surface processing method thereof
Abstract:
A sputtering target and surface processing method is provided. Intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in the target surface in a highly ductile matrix phase at a volume ratio of 1 to 50%. The target surface is preliminarily subjected to primary processing of cutting work, and then subsequently subjected to finish processing via polishing. The sputtering target subject to this surface processing has an improved target surface with numerous substances without ductility and prevents or suppresses the generation of nodules and particles upon sputtering.
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