Invention Grant
- Patent Title: Sputtering target with few surface defects, and surface processing method thereof
- Patent Title (中): 表面缺陷少的溅射靶及其表面处理方法
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Application No.: US13025207Application Date: 2011-02-11
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Publication No.: US08663402B2Publication Date: 2014-03-04
- Inventor: Yuichiro Nakamura , Akira Hisano
- Applicant: Yuichiro Nakamura , Akira Hisano
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2004-055989 20040301
- Main IPC: C22C19/07
- IPC: C22C19/07

Abstract:
A sputtering target and surface processing method is provided. Intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in the target surface in a highly ductile matrix phase at a volume ratio of 1 to 50%. The target surface is preliminarily subjected to primary processing of cutting work, and then subsequently subjected to finish processing via polishing. The sputtering target subject to this surface processing has an improved target surface with numerous substances without ductility and prevents or suppresses the generation of nodules and particles upon sputtering.
Public/Granted literature
- US20110132757A1 Sputtering Target with Few Surface Defects, and Surface Processing Method Thereof Public/Granted day:2011-06-09
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