Invention Grant
- Patent Title: Magnetron sputtering apparatus and method for manufacturing thin film
- Patent Title (中): 磁控管溅射装置及薄膜制造方法
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Application No.: US12468222Application Date: 2009-05-19
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Publication No.: US08663430B2Publication Date: 2014-03-04
- Inventor: Seishi Horiguchi
- Applicant: Seishi Horiguchi
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-133795 20080522
- Main IPC: C23C14/35
- IPC: C23C14/35
Abstract:
In the present invention, in forming a LaB6 thin film by magnetron sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film are improved. In one embodiment of the present invention, in a magnetron sputtering apparatus, parallel magnetic field strength on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength on a surface of the target.
Public/Granted literature
- US20100133089A1 MAGNETRON SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING THIN FILM Public/Granted day:2010-06-03
Information query
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