A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them. The device includes magnetic flux-line pattern control means for changing magnetic flux-line pattern 5 between the targets faced to each other by moving at least part of the pole elements or changing at least either one of field intensity and direction.