Invention Grant
- Patent Title: Method for manufacturing template and method for manufacturing semiconductor device
- Patent Title (中): 用于制造半导体器件的模板和方法的方法
-
Application No.: US12883935Application Date: 2010-09-16
-
Publication No.: US08663895B2Publication Date: 2014-03-04
- Inventor: Yoshihito Kobayashi
- Applicant: Yoshihito Kobayashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2009-218107 20090918
- Main IPC: G03C5/00
- IPC: G03C5/00 ; G03F7/00 ; C03C25/68
Abstract:
According to one embodiment, a method for manufacturing a template for imprinting includes preparing a first template having a device pattern and a plurality of identification patterns, and forming a second template by transferring the device pattern and at lest desired one of the identification patterns to a template substrate.
Public/Granted literature
- US20110068083A1 METHOD FOR MANUFACTURING TEMPLATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-03-24
Information query
