Invention Grant
- Patent Title: Submount for light emitting diode and method for fabricating the same
- Patent Title (中): 发光二极管底座及其制造方法
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Application No.: US13411638Application Date: 2012-03-05
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Publication No.: US08664022B2Publication Date: 2014-03-04
- Inventor: Le-Sheng Yeh , Cheng-I Chien
- Applicant: Le-Sheng Yeh , Cheng-I Chien
- Applicant Address: TW Hsinchu
- Assignee: Episil Technologies Inc.
- Current Assignee: Episil Technologies Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100142007A 20111117
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/311 ; C23F1/00 ; B29D11/00 ; B23P15/00 ; C25F3/00

Abstract:
A submount for a light emitting diode and a method for fabricating the same are provided. The method includes the following steps: (a) providing a silicon substrate; (b) forming a mask layer on the silicon substrate to expose a part of the silicon substrate; (c) forming a first silicon oxide layer in the part of the silicon substrate which is exposed; and (d) removing the mask layer and the first silicon oxide layer, so as to form a recess in the silicon substrate.
Public/Granted literature
- US20130126923A1 SUBMOUNT FOR LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-05-23
Information query
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