Invention Grant
- Patent Title: Manufacturing method thereof and a semiconductor device
- Patent Title (中): 其制造方法和半导体器件
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Application No.: US13660746Application Date: 2012-10-25
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Publication No.: US08664046B2Publication Date: 2014-03-04
- Inventor: Takahiro Yurino
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2002-166898 20020607
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In a semiconductor device, a lead frame made of a copper alloy prevents exfoliation occurring near the surface of the lead frame. A copper oxide layer is formed on the base material made of a copper alloy by immersing the base material into a solution of a strong oxidizer. The copper oxide layer serves as an outermost layer and consists of a copper oxide other than a copper oxide in the form of needle crystals.
Public/Granted literature
- US20130045329A1 MANUFACTURING METHOD THEREOF AND A SEMICONDUCTOR DEVICE Public/Granted day:2013-02-21
Information query
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