Non-volatile memory device formed by dual floating gate deposit

Invention Grant

US08664059B2 Non-volatile memory device formed by dual floating gate deposit 有权

Title translation: 通过双浮栅沉积形成的非易失性存储器件

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Patent Title: Non-volatile memory device formed by dual floating gate deposit
Patent Title (中): 通过双浮栅沉积形成的非易失性存储器件
Application No.: US13456456

Application Date: 2012-04-26
Publication No.: US08664059B2

Publication Date: 2014-03-04
Inventor: Erwan Dornel
Applicant: Erwan Dornel
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Ian MacKinnon
Main IPC: H01L21/8238
IPC: H01L21/8238

Non-volatile memory device formed by dual floating gate deposit

Abstract:

A method includes forming a shallow trench isolation (STI) region in a substrate; depositing a first material such that the first material overlaps the STI region and a portion of a top surface of the STI region is exposed; etching a recess in the STI region by a first etch, the recess having a bottom and sides; depositing a second material over the first material and on the sides and bottom of the recess in the STI region; and etching the first and second material by a second etch to form a floating gate of the device, wherein the floating gate extends into the recess.

Abstract(Chinese):

一种方法包括在衬底中形成浅沟槽隔离（STI）区域; 沉积第一材料，使得第一材料与STI区域重叠，并且STI区域的顶表面的一部分被暴露; 通过第一蚀刻蚀刻STI区域中的凹部，凹部具有底部和侧面; 在所述STI区域中的所述第一材料上以及所述凹部的侧面和底部上沉积第二材料; 以及通过第二蚀刻蚀刻所述第一和第二材料以形成所述器件的浮动栅极，其中所述浮动栅极延伸到所述凹部中。

Public/Granted literature

US20130285133A1 NON-VOLATILE MEMORY DEVICE FORMED BY DUAL FLOATING GATE DEPOSIT Public/Granted day:2013-10-31

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS