Invention Grant
- Patent Title: High capacitance trench capacitor
- Patent Title (中): 高电容沟槽电容
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Application No.: US13788980Application Date: 2013-03-07
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Publication No.: US08664075B2Publication Date: 2014-03-04
- Inventor: Keith Kwong Hon Wong , Ramachandra Divakaruni , Roger A. Booth, Jr.
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Katherine S. Brown, Esq.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/20

Abstract:
A dual node dielectric trench capacitor includes a stack of layers formed in a trench. The stack of layers include, from bottom to top, a first conductive layer, a first node dielectric layer, a second conductive layer, a second node dielectric layer, and a third conductive layer. The dual node dielectric trench capacitor includes two back-to-back capacitors, which include a first capacitor and a second capacitor. The first capacitor includes the first conductive layer, the first node dielectric layer, the second conductive layer, and the second capacitor includes the second conductive layer, the second node dielectric layer, and the third conductive layer. The dual node dielectric trench capacitor can provide about twice the capacitance of a trench capacitor employing a single node dielectric layer having a comparable composition and thickness as the first and second node dielectric layers.
Public/Granted literature
- US20130183805A1 HIGH CAPACITANCE TRENCH CAPACITOR Public/Granted day:2013-07-18
Information query
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