Invention Grant
US08664079B2 Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate
有权
通过在衬底的正面和背面上减薄硬掩模层来制造半导体器件的方法
- Patent Title: Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrate
- Patent Title (中): 通过在衬底的正面和背面上减薄硬掩模层来制造半导体器件的方法
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Application No.: US13316817Application Date: 2011-12-12
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Publication No.: US08664079B2Publication Date: 2014-03-04
- Inventor: Han-Guan Chew , Ming Zhu , Lee-Wee Teo , Harry-Hak-Lay Chuang
- Applicant: Han-Guan Chew , Ming Zhu , Lee-Wee Teo , Harry-Hak-Lay Chuang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate.
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