Invention Grant
- Patent Title: Methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefrom
- Patent Title (中): 形成硅种子层的方法和硅和含硅材料层的方法
-
Application No.: US13476552Application Date: 2012-05-21
-
Publication No.: US08664093B2Publication Date: 2014-03-04
- Inventor: Daniel T. Pham , William J. Taylor, Jr.
- Applicant: Daniel T. Pham , William J. Taylor, Jr.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L21/20 ; H01L21/336
Abstract:
Disclosed herein are various methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefrom. In one example, the method includes forming a layer of silicon dioxide above a structure, converting at least a portion of the layer of silicon dioxide into a silicon-salt layer and converting at least a portion of the silicon-salt layer to a layer of silicon.
Public/Granted literature
- US20130309846A1 METHODS OF FORMING A SILICON SEED LAYER AND LAYERS OF SILICON AND SILICON-CONTAINING MATERIAL THEREFROM Public/Granted day:2013-11-21
Information query
IPC分类:
