Invention Grant
US08664094B2 Method of producing nitride nanowires with different core and shell V/III flow ratios
有权
生产具有不同核和壳V / III流量比的氮化物纳米线的方法
- Patent Title: Method of producing nitride nanowires with different core and shell V/III flow ratios
- Patent Title (中): 生产具有不同核和壳V / III流量比的氮化物纳米线的方法
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Application No.: US13654892Application Date: 2012-10-18
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Publication No.: US08664094B2Publication Date: 2014-03-04
- Inventor: Werner Seifert , Damir Asoli , Zhaoxia Bi
- Applicant: QuNano AB
- Applicant Address: SE Lund
- Assignee: QuNano AB
- Current Assignee: QuNano AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Priority: SE0700102 20070112
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.
Public/Granted literature
- US20130072001A1 Nitride Nanowires and Method of Producing Such Public/Granted day:2013-03-21
Information query
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