Invention Grant
US08664095B2 Black GE based on crystalline/amorphous core/shell nanoneedle arrays
有权
黑色GE基于晶体/非晶核/壳纳米针阵列
- Patent Title: Black GE based on crystalline/amorphous core/shell nanoneedle arrays
- Patent Title (中): 黑色GE基于晶体/非晶核/壳纳米针阵列
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Application No.: US13332743Application Date: 2011-12-21
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Publication No.: US08664095B2Publication Date: 2014-03-04
- Inventor: Ali Javey , Yu-Lun Chueh , Zhiyong Fan
- Applicant: Ali Javey , Yu-Lun Chueh , Zhiyong Fan
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Lawrence Berkeley National Laboratory
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (˜4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (
Public/Granted literature
- US20120161290A1 Black GE Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays Public/Granted day:2012-06-28
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