A method for fabricating an image sensor includes at least one of: (1) Forming a gate on a semiconductor substrate; (2) Forming spacers on both side walls of the gate and forming a dummy pattern on an upper portion of the semiconductor substrate; and (3) Forming a metal pad for an electrical connection on an upper portion of the dummy pattern. The method may include at least one of: (1) Forming an interlayer dielectric layer covering the entire semiconductor substrate, (2) Etching portions of the interlayer dielectric layer and the semiconductor substrate to form a super-contact hole; and (3) forming an insulation film on the entire surface of the interlayer dielectric layer. The method may include forming normal contact holes such that a portion of an upper portion of the gate and a partial region of the metal pad for an electrical connection are exposed and filling up the normal contact holes with a conductive material to form normal contacts.