Invention Grant
US08664117B2 Method for manufacturing semiconductor device using anisotropic etching
有权
使用各向异性蚀刻制造半导体器件的方法
- Patent Title: Method for manufacturing semiconductor device using anisotropic etching
- Patent Title (中): 使用各向异性蚀刻制造半导体器件的方法
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Application No.: US13582536Application Date: 2011-03-04
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Publication No.: US08664117B2Publication Date: 2014-03-04
- Inventor: Katsuyuki Ono , Yusuke Hirayama , Hideyuki Hatoh
- Applicant: Katsuyuki Ono , Yusuke Hirayama , Hideyuki Hatoh
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2010-049833 20100305
- International Application: PCT/JP2011/001280 WO 20110304
- International Announcement: WO2011/108280 WO 20110909
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; anisotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.
Public/Granted literature
- US20130052821A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-02-28
Information query
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