Invention Grant
US08664125B2 Highly selective spacer etch process with reduced sidewall spacer slimming
有权
高选择性间隔蚀刻工艺，减少侧壁间隔物减肥
- Patent Title: Highly selective spacer etch process with reduced sidewall spacer slimming
- Patent Title (中): 高选择性间隔蚀刻工艺，减少侧壁间隔物减肥
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Application No.: US13336388Application Date: 2011-12-23
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Publication No.: US08664125B2Publication Date: 2014-03-04
- Inventor: Angelique Denise Raley , Takuya Mori , Hiroto Ohtake
- Applicant: Angelique Denise Raley , Takuya Mori , Hiroto Ohtake
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from a capping region of the gate structure and a substrate region on the substrate adjacent a base of the gate structure, while retaining a spacer sidewall positioned along a sidewall of the gate structure.
Public/Granted literature
- US20130164940A1 HIGHLY SELECTIVE SPACER ETCH PROCESS WITH REDUCED SIDEWALL SPACER SLIMMING Public/Granted day:2013-06-27
Information query
IPC分类:
