Invention Grant
- Patent Title: Indium oxide sintered compact and sputtering target
- Patent Title (中): 氧化铟烧结体和溅射靶
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Application No.: US13139563Application Date: 2009-06-01
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Publication No.: US08664136B2Publication Date: 2014-03-04
- Inventor: Kazuyoshi Inoue , Futoshi Utsuno , Hirokazu Kawashima , Koki Yano , Shigekazu Tomai , Masashi Kasami , Kota Terai
- Applicant: Kazuyoshi Inoue , Futoshi Utsuno , Hirokazu Kawashima , Koki Yano , Shigekazu Tomai , Masashi Kasami , Kota Terai
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: JP2008-318293 20081215
- International Application: PCT/JP2009/059954 WO 20090601
- International Announcement: WO2010/070944 WO 20100624
- Main IPC: C04B35/00
- IPC: C04B35/00
Abstract:
A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.
Public/Granted literature
- US20110243835A1 INDIUM OXIDE SINTERED COMPACT AND SPUTTERING TARGET Public/Granted day:2011-10-06
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