The infrared ray absorbing film 2 is provided with a first layer 21 containing TiN and a second layer 22 containing an Si based compound, converting energy of infrared ray made incident from the second layer 22 to heat. TiN is high in absorption rate of infrared ray over a wavelength range shorter than 8 μm, while high in reflection rate of infrared ray over a wavelength range longer than 8 μm. Therefore, if an Si based compound layer excellent in absorption rate of infrared ray over a longer wavelength range is laminated on a TiN layer, infrared ray over a wavelength range lower in absorption rate on the TiN layer can be favorably absorbed on the Si based compound layer, and also infrared ray in an attempt to transmit the Si based compound layer can be reflected on a boundary surface of the TiN layer and returned to the Si based compound layer.