Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US13555468Application Date: 2012-07-23
-
Publication No.: US08664660B2Publication Date: 2014-03-04
- Inventor: Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
- Applicant: Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-191097 19990706
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/786
Abstract:
A p channel IFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
Public/Granted literature
- US20120286276A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2012-11-15
Information query
IPC分类:
