Invention Grant
US08664662B2 Thin-film transistor array device, EL display panel, EL display device, thin-film transistor array device manufacturing method, EL display panel manufacturing method
有权
薄膜晶体管阵列器件,EL显示面板,EL显示器件,薄膜晶体管阵列器件制造方法,EL显示面板制造方法
- Patent Title: Thin-film transistor array device, EL display panel, EL display device, thin-film transistor array device manufacturing method, EL display panel manufacturing method
- Patent Title (中): 薄膜晶体管阵列器件,EL显示面板,EL显示器件,薄膜晶体管阵列器件制造方法,EL显示面板制造方法
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Application No.: US13487788Application Date: 2012-06-04
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Publication No.: US08664662B2Publication Date: 2014-03-04
- Inventor: Shinya Ono , Arinobu Kanegae , Genshirou Kawachi
- Applicant: Shinya Ono , Arinobu Kanegae , Genshirou Kawachi
- Applicant Address: JP Osaka JP Hyogo
- Assignee: Panasonic Corporation,Panasonic Liquid Crystal Display Co., Ltd.
- Current Assignee: Panasonic Corporation,Panasonic Liquid Crystal Display Co., Ltd.
- Current Assignee Address: JP Osaka JP Hyogo
- Agency: Greenblum & Bernstein, P.L.C.
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
A thin-film transistor array includes first and second bottom-gate transistors, a passivation film, a conductive oxide film below the passivation film, and a relay electrode between a first conductive material in a same layer as a first electrode of the first transistor and a second conductive material in an electroluminescence layer. A first line is in a layer lower than the passivation film and a second line is above the passivation film. A terminal to which an external signal is input is provided in a periphery of the substrate in the same layer as the first electrode. The conductive oxide film covers an upper surface of the terminal and is between the relay electrode and the first conductive material. The relay electrode is formed in a same layer and comprises a same material as the second line.
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