Invention Grant
- Patent Title: Combined semiconductor apparatus with semiconductor thin film
- Patent Title (中): 具有半导体薄膜的半导体装置
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Application No.: US12654486Application Date: 2009-12-22
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Publication No.: US08664668B2Publication Date: 2014-03-04
- Inventor: Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
- Applicant: Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
- Applicant Address: JP Tokyo
- Assignee: Oki Data Corporation
- Current Assignee: Oki Data Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2002-371724 20021224
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.
Public/Granted literature
- US20100096748A1 Combined semiconductor apparatus with semiconductor thin film Public/Granted day:2010-04-22
Information query
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