Invention Grant
- Patent Title: Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device
- Patent Title (中): 氮化物半导体发光芯片，其制造方法和半导体光学器件
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Application No.: US12659911Application Date: 2010-03-25
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Publication No.: US08664688B2Publication Date: 2014-03-04
- Inventor: Takeshi Kamikawa , Masataka Ohta
- Applicant: Takeshi Kamikawa , Masataka Ohta
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2009-079943 20090327
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.
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