Invention Grant
- Patent Title: EEPROM cell
- Patent Title (中): EEPROM单元
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Application No.: US13775259Application Date: 2013-02-25
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Publication No.: US08664708B2Publication Date: 2014-03-04
- Inventor: Sung Mun Jung , Kian Hong Lim , Jianbo Yang , Swee Tuck Woo , Sanford Chu
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A method of forming a device is disclosed. The method includes providing a substrate prepared with a cell area and forming first and second gates of first and second transistors in the cell area. The first gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the first gate are separated by a first intergate dielectric layer. The second gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the second gate are separated by a second intergate dielectric layer. The method also includes forming first and second junctions of the first and second transistors. A first gate terminal is formed and coupled to the second sub-gate of the first transistor. A second gate terminal is formed and coupled to at least the first sub-gate of the second transistor.
Public/Granted literature
- US20130161720A1 EEPROM CELL Public/Granted day:2013-06-27
Information query
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