Invention Grant
- Patent Title: High voltage device with reduced leakage
- Patent Title (中): 高压器件泄漏减少
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Application No.: US13735831Application Date: 2013-01-07
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Publication No.: US08664719B2Publication Date: 2014-03-04
- Inventor: Shu-Wei Vanessa Chung , Kuo-Feng Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity.
Public/Granted literature
- US20130119466A1 High Voltage Device with Reduced Leakage Public/Granted day:2013-05-16
Information query
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