Invention Grant
- Patent Title: Magnetic pressure sensor
- Patent Title (中): 磁力传感器
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Application No.: US13706821Application Date: 2012-12-06
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Publication No.: US08664732B2Publication Date: 2014-03-04
- Inventor: Gibert Erdler
- Applicant: Micronas GmbH
- Applicant Address: DE Freiburg
- Assignee: Micronas GmbH
- Current Assignee: Micronas GmbH
- Current Assignee Address: DE Freiburg
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: DE102011120166 20111206
- Main IPC: H01L27/22
- IPC: H01L27/22

Abstract:
A magnetic pressure sensor is provided that includes a semiconductor body with a top side and a back side, a Hall sensor formed on the top side of the semiconductor body, a spacer connected to the semiconductor body, whereby the spacer has a recess in the center, and a membrane covering the recess, whereby the membrane has a first material and has a ferromagnetic substance. The ferromagnetic substance concentrates a magnetic flux density of a source formed outside the ferromagnetic material, and the spacer is formed as a circumferential wall and has a second material and the second material is different from the first material in at least one element.
Public/Granted literature
- US20130140652A1 MAGNETIC PRESSURE SENSOR Public/Granted day:2013-06-06
Information query
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