Invention Grant
US08664734B2 Hole-based ultra-deep photodiode in a CMOS image sensor and a process thereof
有权
CMOS图像传感器中的基于孔的超深度光电二极管及其工艺
- Patent Title: Hole-based ultra-deep photodiode in a CMOS image sensor and a process thereof
- Patent Title (中): CMOS图像传感器中的基于孔的超深度光电二极管及其工艺
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Application No.: US13004528Application Date: 2011-01-11
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Publication No.: US08664734B2Publication Date: 2014-03-04
- Inventor: Yang Wu , Feixia Yu
- Applicant: Yang Wu , Feixia Yu
- Applicant Address: KY Grand Cayman
- Assignee: Himax Imaging, Inc.
- Current Assignee: Himax Imaging, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L31/0352
- IPC: H01L31/0352
Abstract:
A hole-based ultra-deep photodiode in a CMOS image sensor and an associated process are disclosed. A p-type substrate is grounded or connected to a negative power supply. An n-type epitaxial layer is grown on the p-type substrate, and is connected to a positive power supply. An ultra-deep p-type photodiode implant region is formed in the n-type epitaxial layer. Thermal steps are added to insure a smooth and deep doping profile.
Public/Granted literature
- US20120175691A1 HOLE-BASED ULTRA-DEEP PHOTODIODE IN A CMOS IMAGE SENSOR AND A PROCESS THEREOF Public/Granted day:2012-07-12
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