Invention Grant
- Patent Title: Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the same
- Patent Title (中): 用于背面照明图像传感器装置的接合垫结构及其制造方法
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Application No.: US13112755Application Date: 2011-05-20
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Publication No.: US08664736B2Publication Date: 2014-03-04
- Inventor: Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Yueh-Chiou Lin
- Applicant: Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Yueh-Chiou Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A semiconductor device including a device substrate having a front side and a back side. The semiconductor device further includes an interconnect structure disposed on the front side of the device substrate, the interconnect structure having a n-number of metal layers. The semiconductor device also includes a bonding pad disposed on the back side of the device substrate, the bonding pad extending through the interconnect structure and directly contacting the nth metal layer of the n-number of metal layers.
Public/Granted literature
- US20120292730A1 Semiconductor Device Having a Bonding Pad and Method of Manufacturing The Same Public/Granted day:2012-11-22
Information query
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