Invention Grant
- Patent Title: Trenched substrate for crystal growth and wafer bonding
- Patent Title (中): 用于晶体生长和晶圆键合的沟槽衬底
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Application No.: US12111084Application Date: 2008-04-28
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Publication No.: US08664747B2Publication Date: 2014-03-04
- Inventor: Jie Cui
- Applicant: Jie Cui
- Applicant Address: JP Tokyo
- Assignee: Toshiba Techno Center Inc.
- Current Assignee: Toshiba Techno Center Inc.
- Current Assignee Address: JP Tokyo
- Agency: Hogan Lovells US LLP
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A substrate for a light emitting diode (LED) can have one or more trenches formed therein so as to mitigate stress build up within the substrate due to mismatched thermal coefficients of expansion between the substrate and layers of material, e.g., semiconductor material, formed thereon. In this manner, the likelihood of damage to the substrate, such as cracking thereof, is substantially mitigated.
Public/Granted literature
- US20090267083A1 TRENCHED SUBSTRATE FOR CRYSTAL GROWTH AND WAFER BONDING Public/Granted day:2009-10-29
Information query
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