Invention Grant
- Patent Title: Semiconductor device with front and back side resin layers having different thermal expansion coefficient and elasticity modulus
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Application No.: US13441019Application Date: 2012-04-06
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Publication No.: US08664779B2Publication Date: 2014-03-04
- Inventor: Masaki Kasai , Osamu Miyata
- Applicant: Masaki Kasai , Osamu Miyata
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2005-189571 20050629; JP2005-189572 20050629
- Main IPC: H01L23/29
- IPC: H01L23/29

Abstract:
Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.
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