Invention Grant
US08665008B2 Semiconductor device that can cancel noise in bias line to which bias current flows
有权
可以消除偏置电流流动的偏置线中的噪声的半导体器件
- Patent Title: Semiconductor device that can cancel noise in bias line to which bias current flows
- Patent Title (中): 可以消除偏置电流流动的偏置线中的噪声的半导体器件
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Application No.: US13398711Application Date: 2012-02-16
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Publication No.: US08665008B2Publication Date: 2014-03-04
- Inventor: Hideyuki Yokou , Isao Nakamura , Manabu Ishimatsu
- Applicant: Hideyuki Yokou , Isao Nakamura , Manabu Ishimatsu
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2011-036041 20110222
- Main IPC: G05F1/10
- IPC: G05F1/10
Abstract:
Disclosed herein is a device that includes a bias line to which a bias current flows, a switch circuit controlling an amount of the bias current based on a control signal, a control line to which the control signal is supplied, and a cancellation circuit substantially cancelling a potential fluctuation of the bias line caused by changing the control signal, the potential fluctuation propagating via a parasitic capacitance between the control line and the bias line.
Public/Granted literature
- US20120212286A1 SEMICONDUCTOR DEVICE THAT CAN CANCEL NOISE IN BIAS LINE TO WHICH BIAS CURRENT FLOWS Public/Granted day:2012-08-23
Information query
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